In Memoriam Bruno Karl Meyer - page 11

A. Hoffmann, Institut für Festkörperphysik, TU Berlin
I
4
- donor bound exciton complex in ZnO
Reflection spectroscopy
Why VCSELs andwhy quantum dots (QDs)?
InGaN insertions inGaN as
dense arrays ofQDs
Surface lasing incavities withoutDBRs:
Narrow line, superlinear growth in intensity,
singlemode character,
high threshold excitationdensity
AlGaN/GaN DBRs and their impacton
the threshold excitationdensity
Room temperature photopumpedVCSELs
Far-field patterns of lasing and spontaneous
emission
Efficient InGaN/GaN/AlGaNLEDs
Resonant-cavity LEDs as prototypes of
current-injectionVCSELs
Conclusions
B. K. Meyer a d A. Hoffma n (GaN)
1...,2,3,4,5,6,7,8,9,10 12,13,14,15,16,17,18,19,20,21,...40
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