A. Hoffmann, Institut für Festkörperphysik, TU Berlin
I
4
- donor bound exciton complex in ZnO
Reflection spectrosc py
Why VCSELs andwhy quantum dots (QDs)?
InGaN insertions inGaN as
dense arrays ofQDs
Surface lasing incavities withoutDBRs:
Narrow line, superlinear growth in intensity,
singlemode character,
high threshold excitationdensity
AlGaN/GaN DBRs and their impacton
the threshold excitationdensity
Room temperature photopumpedVCSELs
Far-field patterns of lasing and spontaneous
emission
Efficient InGaN/GaN/AlGaNLEDs
Resonant-cavity LEDs as prototypes of
current-injectionVCSELs
Conclusions
B.K. Meyer ( Start of common nitrid research )
0.9 1.0 1.1 1.2 1.3
Intensity (arb. units)
V
3+
Ti
2+
Fe
3+
0
Energy (eV)
2.1 2.4 2.7 3.0 3.3
*200
T=1.8K
'Yellow'
(D
0
,X)
DAP
Energy (eV)
3.40 3.44 3.48
Energy (eV)
*40
X
(A
0
,X)
