Cadmium zinc sulfide Cd
1-x
Zn
x
S for improving the performance of chalcogenides
CdTe, CZTS and CZTSe solar cells
Sabrina Benabbas
1
, Zahir Rouabah
1
, Hocine Heriche
1
, Nacer-eddine Chelali
1,
Nadir
Bouarissa
2
.
1
Materials and Electronic Systems Laboratory, University of Bordj-Bou-Arreridj, El-Anasser,
34265 Bordj-Bou-Arreridj, Algeria.
2
Laboratory of Materials Physics and its Applications, University of M'sila, 28000, M'sila,
Algeria.
Cadmium zinc sulfide (Cd
1-x
Zn
x
S) as a wide-band gap material with x=0.2 was used
instead of CdS buffer layer in ZnO/CdS/CdTe, ZnO/CdS/CZTS, ZnO/CdS/CZTSe structures,
using AMPS-1D and SCAPS-one-dimensional simulation program. The photovoltaic
parameters such as efficiency, open circuit voltage (Voc), short circuit current (Jsc) and the
fill factor (FF) have been calculated. An improvement in conversion efficiency is noticed
compared to the structure with CdS buffer layer. It is found that the efficiency of Cd
1-
x
Zn
x
S/CZTSe and Cd
1-x
Zn
x
S/CdTe is increased from 12.61% to 15.35% and from 17.53 % to
18.83 %, respectively. This was performed for 1 µm thickness of absorber layer. Besides, we
have found that the efficiency rises from 12.53% to 13.23% with Cd
1-x
Zn
x
S/CZTS structure
for 2.5 µm of absorber layer CZTS. The present study shows that the new suggested
structures my improve the efficiency and reduce the amount of Cd which is a toxic element.
Keywords:
Cd
1-x
Zn
x
S, AMPS-1D, SCAPS, absorber layer, buffer layer.
PS1 35
-191-
