Recent Progress of Electro-Active Transparent Materials
Hideo Hosono
Materials Research Center of Element Strategy,
Tokyo Institute of Technology, JAPAN
E-mail
Research on transparent oxide semiconductor has much advanced in the last decade.
1)
In
particular, transparent amorphous oxide semiconductor (TAOS) was proposed as a novel
class of amorphous semiconductors having large electron mobility comparable to those in the
corresponding crystals. Application of TAOS to an active layer in thin-film transistors (TFTs)
was reported in late 2004. Since then, extensive research on application of TAOS TFT, in
particular In-Ga-Zn-O (IGZO)-based TAOS, to the backplane of state-of-the-art flat-panel
displays has been performed, and many displays driven by oxide backplanes such as smart
phones, tablet PCs, PC monitors and large-sized OLEDs have been commercialized. This talk
gives a brief review on progress of oxide semiconductors in last decade, and then introduces
our new materials
2)
for electron injection layers in OLEDs, catalysis for ammonia synthesis
at mild conditions
3)
and for red LEDs.
4)
1)
(Reviews) Ellimer, Nat.Photonics, 6, 809(2013);
Yu, Marks, Facchetti, Nat.Mat.15,383(2016):
2) Proc.Nat.Acad.Sci.USA, doi:10.1073/pnas.1606891113
3) Chem. Sci., 7, 4036 (2016); Nat. Comm, 6, 6731(2015).
4) Nat.Comm. 7, 11962, (2016).
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