Synthesis, chemical, structural and electrical analysis of TCO and
TCO/virus hybrid materials
Shawn Sanctis, Rudolf W. Hoffmann and Joerg J. Schneider
#
Department of Chemistry, Inorganic Chemistry, Alarich-Weiss Str. 12,Technische Universität
Darmstadt, 64287 Darmstadt, Germany
Contact details
Phone ++49 6151 1621100
Solution processed transparent conductive oxides offer a tremendous rich field for
fundamental as well as applied research studies in metal oxide interface chemistry. These
span a wide range from basic understanding how these materials are fabricated and
processed, be it from defined molecular entities or preformed nanoscale building blocks
which can be assembled in a controlled fashion, up to sophisticated processing steps with the
goal to assemble a complete device architecture, e.g. a FET. While tremendous efforts have
led to impressive sucesses towards an improved understanding in that area over the last
decade, a detailed understanding how crucial parameters like film formation and morphology
dictate the outcome of the electrical performance is not fully understood, yet. Therefore,
efforts in developing new and better precursors which allow a straightforward processing
strategy yielding a reproducible thin film morphology which leads to a controlled electrical
performance is still highly desirable. Therefore the interplay of semiconductor and
dielelectric material needs to be further understood.
In our contribution we show how a systematic development of a designed molecular
precursor route as materials platform uses stable and accessible metal coordination
compounds allowing access to various binary as well as multinary thin film oxide materials
of the metals Zn, In, Ga, Sn, Zr, Hf, and Ta either as semiconducting or dielectric layer
materials. Due to the controlled and fully understood precursor chemistry the thin film
composition in the final metal oxide films can be tuned and allows a study of the
morphological as well as elctrical nature of the resulting metal oxides by techniques like
electron paramagnetic resonance (EPR), Auger spectroscopy, X-ray reflectometry (XRR) as
well as positron annhilation spectroscopy (PAS). This approach has led to a refined chemical
understanding of interface properties of active layers in solution processed thin film transistor
devices [1-5]. Finally we will show how such a solution processed transistor architecture can
be employed as sensor for studying charge distribution in biological nanoscaled objects like
viruses.
[1] S. Sanctis, R.W. Hoffmann, J.J. Schneider
RSC Adv
.
2013
,
3
, 20071-20076
[2] J.J. Schneider, R.C. Hoffmann, M. Kaloumenos, A. Issanin, S. Weber, E. Erdem
Eur. J. Inorg. Chem.
2014
, 5554–5560
[3] S. Sanctis, R. C. Hoffmann, S. Eiben, J. J. Schneider
Beilstein J. Nanotechnol.
2015
,
6
, 785-791
[4] P. Atanasova, N. Stitz, S. Sanctis, J. H. M. Maurer, R. C. Hoffmann, S. Eiben, H. Jeske,
J. J. Schneider, J. Bill
Langmuir
2015
,
31
, 3897-3903.
[5] R.C. Hoffmann, M. Kaloumenis, D. Spiehl, E. Erdem, S. Repp, S. Weber, J.J. Schneider
Phys.Chem.Chem.Phys.
2015
,
17
, 31801 - 31809
O 6
-33-
