Thin film device applications with transparent amorphous SiInZnO semiconductors
Sang Yeol Lee
Department of Semiconductor Engineering, Cheongju University,
Cheongju, 360-764, Chungbuk, Korea
E-mail:
Based on Si included amorphous oxides, various thin film devices have been demonstrated
with SiInZnO amorphous semiconductor. Amorphous oxide has been intensively studied for
active channel layer. Excellent performances originate from the unique characteristics of
transparent amorphous oxide semiconductors (AOS) which is the direct orbital overlap
between s orbitals of neighboring metal cations. Indium is well known materials which make
oxygen vacancy to increase the mobility and wide applications in Zn-based oxide TFTs, such
as indium-gallium-zinc oxide (IGZO), indium-tin oxide (ITO) and indium-zinc oxide (IZO).
Oxygen vacancy plays an important role by providing major carrier in active channel layer in
AOS systems. Recently, theoretical calculations have indicated that the Si may be an
excellent oxygen binder as carrier suppressor in the InZnO system for low temperature
processing. In order to increase electrical characteristics, control of defect states was needed.
To overcome these, novel materials of oxide TFTs using various Si contents will be discussed
in terms of the enhancement of mobility and low temperature processing.
PO 10
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